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Optimización de los parámetros de crecimiento de la heteroestructura GaSb/GaInAsSb/GaSb fabricada por la técnica de epitaxia en fase líquida
(Ciencias Básicas y Tecnologías - Maestría en Ciencias de los Materiales, 2013-02-01)
El crecimiento de una estructura cristalina epitaxial haciendo uso de la técnica de Epitaxia en Fase Líquida (EFL) se puede desglosar en tres componentes procedimentales, la preparación de la solución líquida precursora, ...
Transiciones ópticas de excitones confinados en nanocristales semiconductores de GaSb/GaInAsSb/GaSb
(Universidad Autónoma de Occidente, 2013-01)
El libro presenta un estudio teórico sobre la energía del fotón asociada a transiciones ópticas de excitones confinados en nanocristales formados por heteroestructras semiconductoras de GaSb/GaInAsSb/GaSb. Además, se ...
Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy
(2012-11-26)
Raman scattering spectroscopy was used to measure and analyze the lattice
vibrations in some quaternary Ga1-xInxAsySb1-y alloys with low (In, As) contents, (0.03 <x<
0.12 and 0.03 <y< 0.10). The layers were grown by ...
Lattice vibrations study of Ga1-xInxAsySb1-y quaternary alloys with low (In, As) content grown by liquid phase epitaxy
(2012-12-17)
Raman scattering spectroscopy was used to measure and analyze the lattice
vibrations in some quaternary Ga1-xInxAsySb1-y alloys with low (In, As) contents, (0.03 <x<
0.12 and 0.03 <y< 0.10). The layers were grown by ...
Ga1- xInxAsySb1- y/GaSb spherical quantum dot in a magnetic field
(2012-12)
Quaternary semiconductor alloys type-I are appropriated materials for heterostructure devices because they provide a natural form to tune the magnitude of the band gap so that it can operate in the mid-infrared (mid-IR) ...
Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells
(AMER INST PHYSICS, 2008)
We theoretically investigate the Rashba spin-orbit interaction in InAs/GaSb quantum wells (QWs). We find that the Rashba spin-splitting (RSS) sensitively depends on the thickness of the InAs layer. The RSS exhibits nonlinear ...
Caracterizacion por fotorreflectancia de películas epitaxiales cuaternarias Ga1-xInxAsySb1-y
(Ciencias Básicas y Tecnologías - Maestría en Ciencias de los Materiales, 2004-09-23)
Three Ga1¡xInxAsySb1¡y epitaxial thin films samples: x = 0:16; y = 0:11, x = 0:17; y =
0:14 and x = 0:17; y = 0:18, respectively, were studied by means of photoreflectance
(PR) technique in order to determine the fundamental ...
Metal contacts on GaSb substrates and GaInAsSb epilayers for infrared detector applications
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2012)
Metal contacts on GaSb substrates and GaInAsSb epilayers for infrared detector applications
(Instituto Nacional de Astrofísica, Óptica y Electrónica, 2012)