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Coherent atomic oscillations and resonances between coupled Bose-Einstein condensates with time-dependent trapping potential
(2000-08-01)
The atomic tunneling between two tunnel-coupled Bose-Einstein condensates (BECs) in a double-well time-dependent trap was studied. For the slowly varying trap, synchronization of oscillations of the trap with oscillations ...
Photoinduced Quantum Tunneling Model Applied to an Organic Molecule
(2020-10-01)
The paper proposes a photoinduced quantum tunneling model of electron transfer through four quantum square wells potential to simulate the biological process of photosynthesis in bacteria. The problem is mathematically ...
Magnetic Polarization of the Tunneling Current
(Ieee-inst Electrical Electronics Engineers IncPiscatawayEUA, 2013)
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective
(Ieee-inst Electrical Electronics Engineers Inc, 2016-07-01)
In this work, the impact of the diameter on vertical nanowire tunnel field effect transistors is analyzed focusing on the conduction mechanism and analog parameters, considering different conduction regimes. The diameter ...
Control of the persistent currents in two interacting quantum rings through the Coulomb interaction and interring tunneling
(AMER PHYSICAL SOC, 2008)
The persistent current in two vertically coupled quantum rings containing few electrons is studied. We find that the Coulomb interaction between the rings in the absence of tunneling affects the persistent current in each ...
Conductivity in SnO2 polycrystalline thick film gas sensors: Tunneling electron transport and oxygen diffusion
(Elsevier, 2014-01)
Conduction mechanisms in polycrystalline SnO2 thick sensing films were investigated by means of DC electrical resistance during heating?cooling cycles. Samples were maintained at relatively high temper- atures in H2 or ...
Study of the utbbbe soi tunnel-fet working as a dual-technology transistor
(2021-08-23)
— In this work we further investigate the operation of theBESOI (Back-Enhanced Silicon-On Insulator) Dual-Technology FET, analyzing not only its behavior as a p-type Tunnel-FET when a negative back bias is applied to the ...
Line And Point Tunneling In Scaled Si/sige Heterostructure Tfets
(Institute of Electrical and Electronics Engineers Inc., 2014)
Single-electron Faraday generatorSingle-electron Faraday generator
(Revista Mexicana de Física, 2011)
The dynamics of excitons and trions in resonant tunneling diodes
(Pergamon-elsevier Science LtdOxfordInglaterra, 2005)