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Influence of nonmagnetic impurity scattering on spin dynamics in diluted magnetic semiconductors
(American Physical Society, 2017-01)
The doping of semiconductors with magnetic impurities gives rise not only to a spin-spin interaction between quasifree carriers and magnetic impurities but also to a local spin-independent disorder potential for the carriers. ...
Relaxation mechanism for electron spin in the impurity band of n -doped semiconductors
(American Physical Society, 2007-12)
We propose a mechanism to describe spin relaxation in n -doped III-V semiconductors close to the Mott metal-insulator transition. Taking into account the spin-orbit interaction induced spin admixture in the hydrogenic donor ...
Influence of the spin-orbit interaction in the impurity-band states of n-doped semiconductors
(Elsevier Science, 2012)
Nonperturbative correlation effects in diluted magnetic semiconductors
(American Physical Society, 2016-01)
The effects of carrier-impurity correlations due to a Kondo-like spin-spin interaction in diluted magnetic semiconductors are investigated. These correlations are not only responsible for a transfer of spins between the ...
Spin relaxation near the metal-insulator transition: Dominance of the Dresselhaus spin-orbit coupling
(American Physical Society, 2012-01)
We identify the Dresselhaus spin-orbit coupling as the source of the dominant spin-relaxation mechanism in the impurity band of a wide class of n-doped zinc blende semiconductors. The Dresselhaus hopping terms are derived ...
FP-LAPW calculations of the EFG at Cd Impurities in rutile SnO2
(Kluwer Academic/Plenum Publ, 2001-11)
We report an ab initio study of the electric-field gradient (EFG) at Cd impurities located at the cation site in the semiconductor SnO2 (rutile phase). The study was performed with the WIEN97 implementation of the FP-LAPW ...
Preparation of In-doped Y2O3 ceramics through a sol-gel process: Effects on the structural and electronic properties
(Elsevier, 2020-03)
The Pechini-type sol-gel (PSG) process has been used for the preparation of doped oxides due to its capability to overcome most of the difficulties that frequently occur by using other producing methods. In this work we ...
Mechanical doping of ZnO powders
(Elsevier Science Sa, 2012-09)
Massive Zn 1-xFe xO ternary oxides were prepared by mechanical milling from different starting materials as Fe 2O 3, α-Fe or FeO. The influence of different preparation conditions, such as initial concentrations, atmosphere ...
Intergranular barrier height fluctuations in polycrystalline semiconductors
(Wiley-VCH, 2017-05)
The punctual character and random nature of the impurity positions in depletion regions lead to inhomogeneities that can significantly affect the potential intergranular barriers at polycrystalline semiconductors and, in ...
Ionic exchange and the local structure in the HfO2/Ho 2O3 system studied by PAC spectroscopy
(Elsevier Science Sa, 2014-05)
The ionic exchange of Hf and Ho atoms in the HfO2/Ho 2O3 system was studied at the atomic level applying the nuclear solid-state Time-Differential γ-γ Perturbed-Angular- Correlation (PAC) spectroscopy. This exchange was ...