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Growth of SrBi4Ti4O15 thin films in a microwave oven by the polymeric precursor method
(Elsevier B.V. Sa, 2008-05-08)
SrBi4Ti4O15 (SBTi) thin films were obtained by the polymeric precursor method and crystallized in a domestic microwave oven. For comparison, films were also crystallized in a conventional furnace at 700 degrees C for 2 h. ...
Effect of the microwave oven on structural, morphological and electrical properties of SrBi4Ti4O15 thin films grown on Pt/Ti/SiO2/Si substrates by a soft chemical method
(Elsevier B.V., 2008-06-01)
Thin films of SrBi4Ti4O15 (SBTi), a prototype of the Bi-layered-ferroelectric oxide family, were obtained by a soft chemical method and crystallized in a domestic microwave oven. For comparison, films were also crystallized ...
Ferroelectric and dielectric properties of Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 thin films grown by the soft chemical method
(Elsevier B.V., 2006-10-01)
Polycrystalline Ba0.5Sr0.5(Ti0.80Sn0.20)O-3 (BST:Sn) thin films with a perovskite structure were prepared by the soft chemical method on a platinum-coated silicon substrate from spin-coating technique. The resulting thin ...
Preparation and characterization of SrBi2Nb2O9 thin films made by polymeric precursors
(1998-10-01)
A polymeric precursor solution was employed in preparing SrBi2Nb2O9 (SBN) powder and thin films dip coated onto Si(100) substrate. XRD results show that the SBN perovskite phase forms at temperatures as low as 600°C through ...
Microstructure, dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr0.25Ti0.75]O-3 thin films
(Springer, 2009-01-01)
Ba[Zr0.25Ti0.75]O-3 (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 A degrees C for different times and at 700 A degrees C for 2 h. These thin films were analyzed by X-ray ...
Potentialities and practical limitations of absolute neutron dosimetry using thin films of uranium and thorium applied to the fission track dating
(Elsevier B.V., 1999-06-01)
Neutron dosimetry using natural uranium and thorium thin films makes possible that mineral dating by the fission-track method can be accomplished, even when poor thermalized neutron facilities are employed. In this case, ...
Electric and dielectric behavior of CaCu3Ti4O12-based thin films obtained by soft chemical method
(Elsevier B.V. Sa, 2011-10-13)
CaCu3Ti4O12 (stoichiometric) and Ca1.1Cu2.9Ti4O12 (non-stoichiometric) thin films have been prepared by the soft chemical method on Pt/Ti/SiO2/Si substrates, and their electrical and dielectric properties have been compared ...
Tribocorrosion behavior of Ti-C-O-N nanostructured thin films (black) for decorative applications
(2013-07-17)
Abstract: In the past few years, tribocorrosion has become a focus of research because of its relevance in terms of the future in-service degradation mechanisms of materials. In the particular case of decorative coatings, ...
Effect of variations in annealing temperature and metallic cations on nanostructured molybdate thin films
(Springer, 2008-04-01)
Crystalline molybdate thin films were prepared by the complex polymerization method. The AMoO(4) (A = Ca, Sr, Ba) films were deposited onto Si wafers by the spinning technique. The Mo-O bond in the AMoO(4) structure was ...
Electrical characterization of lanthanum-modified bismuth titanate thin films obtained by the polymeric precursor method
(Taylor & Francis Ltd, 2004-01-01)
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration ranging from 0 to 0.75 were grown on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution and spin-coating method. The ...