Otro
Study of photoinduced birefringence vs As content in thin GeAsS films
Registro en:
Optical Materials Express, v. 3, n. 6, p. 671-683, 2013.
2159-3930
2998503841917815
1935970066259831
Autor
Palanjyan, K.
Messaddeq, S. H.
Messaddeq, Younes
Vallée, R.
Knystautas, E.
Galstian, T.
Resumen
Thin films of GeAsS glass are prepared by e-beam evaporation technique. Photoinduced birefringence (PIB) is studied as function of the As content with concentrations ranging from 10% to 40%. Raman spectroscopy is used as additional tool to explain the corresponding changes undergone by the material system. The breakdown of homopolar bonds is suggested as a possible mechanism of photo induced structural changes leading to the creation of the PIB.