dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorPontes, D. S. L.
dc.creatorCapeli, R. A.
dc.creatorGarzim, M. L.
dc.creatorPontes, F. M.
dc.creatorChiquito, A. J.
dc.creatorLongo, E.
dc.date2014-12-03T13:11:46Z
dc.date2016-10-25T20:15:06Z
dc.date2014-12-03T13:11:46Z
dc.date2016-10-25T20:15:06Z
dc.date2014-04-15
dc.date.accessioned2017-04-06T06:34:28Z
dc.date.available2017-04-06T06:34:28Z
dc.identifierMaterials Letters. Amsterdam: Elsevier Science Bv, v. 121, p. 93-96, 2014.
dc.identifier0167-577X
dc.identifierhttp://hdl.handle.net/11449/113535
dc.identifierhttp://acervodigital.unesp.br/handle/11449/113535
dc.identifier10.1016/j.matlet.2014.01.119
dc.identifierWOS:000334084600025
dc.identifierhttp://dx.doi.org/10.1016/j.matlet.2014.01.119
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/924276
dc.descriptionThe ferroelectric and dielectric properties of lead barium strontium titanate (PBST) thin films are investigated on different bottom electrode and substrate such as Pt, LaNiO3 and Pt/Ti/SiO2/Si, LaAlO3(100), respectively. X-ray diffraction results indicate that the PBST and LaNiO3 films on LaAlO3(100) single crystal substrate are highly (100)-oriented whereas the PBST films on Pt/Ti/SiO2/Si are polycrystalline. The results indicate strong effects of bottom electrode on the dielectric permittivity and tunability of the PBST films. The dielectric permittivity and tunability for the highly (100)-oriented PBST films on LaNiO3/LaAlO3(100) structure were 1238% and 65%, respectively, at 100 kHz, while PBST films prepared on PtiTi/SiO2/Si substrate, showed a dielectric permittivity of 520 and tunability of 47%, at 100 kHz. A slight shift of the phase transition temperature to lower temperatures was observed for highly (100)-oriented films in comparison to the polycrystalline films. Electrical properties should depend strongly on orientation and bottom electrode, which is reflected in our experimental observations. (C) 2014 Elsevier B.V. All rights reserved.
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.languageeng
dc.publisherElsevier B.V.
dc.relationMaterials Letters
dc.rightsinfo:eu-repo/semantics/closedAccess
dc.subjectThin films
dc.subjectFerroelectric
dc.subjectTexture
dc.subjectChemical solution deposition
dc.titleStructural, microstructural, optical and electrical properties of (Pb,Ba,Sr)TiO3 films growth on conductive LaNiO3-coated LaAO(3)(100) and Pt/Ti/SiO2/Si substrates
dc.typeOtro


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