This work describes the development of the crystal cesium iodide doped with thallium (CsI:Tl) for use as a radiation detector. For CsI salt purification the zonal refining methodology using a horizontal oven at a constant temperature of 700 ??C was used. The high temperature region corresponds to approximately 10% of the salt bed containing (260 mm). This region moves at a speed of 50 mm/h. The crystal growth was carried out by Bridgman technique, using a vertical oven at speed of 1 mm/h.