Artigo de peri??dico
Low-temperature reduction of graphene oxide using the HDDR process for electrochemical supercapacitor applications
Registro en:
0255-5476
1012
10.4028/www.scientific.net/MSF.1012.141
0000-0001-6072-5853
Sem Percentil
15.00
Autor
BENITEZ JARA, F.G.
CRUZ, P.D.V.
BARBOSA, L.P.
CASINI, J.C.S.
SAKATA, S.K.
PERUZZI, A.J.
FARIA, R.N.
Resumen
In the present work, attempts of reducing a graphene oxide powder using a low
temperature hydrogenation disproportionation desorption and the recombination process (L-HDDR)
has been carried out. A lower processing temperature in large scale production is significant when
costs are concerned. Graphite oxide was prepared using a modified Hummers??? method dispersed in
ethanol and exfoliated using ultrasonication to produce Graphene Oxide (GO). Investigations have
been carried out by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The
experimental results of L-HDDR processing graphene oxide powder, using unmixed hydrogen at
400??C and relatively low pressures (<2 bars) have been reported. X-ray diffraction patterns showed
a reduction of graphene oxide with the L-HDDR process. The results showed that both processes,
the L-HDDR as well as the standard HDDR, may be applied to the reduction of graphene oxide in
order to produce supercapacitor materials. The advantage of employing the L-HDDR process is a
relatively low temperature reducing the cost of treatment, what is a very important factor for
producing a large amount of material. Thus, the L-HDDR process has been considered a promising
alternative method of reducing graphene oxide with efficiency, with the possibility of large scale
production.