Neutron transmutation doping of silicon: highly homogeneous resistivity semiconductor material produced in nuclear reactors

dc.creatorCARBONARI, A.W.
dc.creator4th MEETING ON NUCLEAR APPLICATIONS, ENCONTRO NACIONAL DE APLICACOES NUCLEARES
dc.date2014-11-17T17:06:17Z
dc.date2014-11-18T18:17:40Z
dc.date2015-04-02T06:14:09Z
dc.date2014-11-17T17:06:17Z
dc.date2014-11-18T18:17:40Z
dc.date2015-04-02T06:14:09Z
dc.dateAugust 18-22, 1997
dc.date.accessioned2023-09-28T13:19:56Z
dc.date.available2023-09-28T13:19:56Z
dc.identifierhttp://repositorio.ipen.br/handle/123456789/12102
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8993536
dc.format1196-1201
dc.rightsopenAccess
dc.subjectsemiconductor materials
dc.subjectsilicon
dc.subjectcrystal doping
dc.subjectphosphorus
dc.subjectboron
dc.subjectiear-1 reactor
dc.subjectthermal neutrons
dc.subjecttransmutation
dc.titleNeutron transmutation doping of silicon: highly homogeneous resistivity semiconductor material produced in nuclear reactors
dc.typeTexto completo de evento
dc.coverageN


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