A high power 2.3. microns Yb:Tm:YLF laser diode-pumped simultaneously at 685 and 960 nm

Artigo de peri??dico

Registro en:

1464-4258

http://repositorio.ipen.br/handle/123456789/5051

10

https://repositorioslatinoamericanos.uchile.cl/handle/2250/8975384

Autor

MATOS, P.S.F.

WETTER, N.U.

GOMES, L.

RANIERI, I.M.

BALDOCHI, S.L.

Institución

Instituto de Pesquisas Energéticas e Nucleares (Brasil)

Materias

diode-pumped solid state lasers

computerized simulation

doped materials

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