Otro
Low voltage electroluminescence of terbium- and thulium-doped zinc oxide films
Registro en:
Journal of Alloys and Compounds. Lausanne: Elsevier B.V. Sa, v. 418, n. 1-2, p. 35-38, 2006.
0925-8388
10.1016/j.jallcom.2005.10.066
WOS:000238781500006
Autor
Lima, SAM
Davolos, Marian Rosaly
Legnani, C.
Quirino, W. G.
Cremona, M.
Resumen
Strong interest in developing technology for visual information. stimulates research for thin film electroluminescent devices. Here, for the first time, we report that thulium- and terbium-doped zinc-oxide films are suitable for electroluminescence applications. Two different devices were assembled as lTO/LiF/ZnO:RE/LiF/Al or ITO/SiO2/ZnO:RE/SiO2/Al, where ZnO:RE is a film of zinc oxide containing 10 at% of Tb3+ or Tm3+. Electroluminescence spectra show that besides a broad emission band with maximum around 650 nm assigned to ZnO, also emission lines from Tb3+ at 484 nm (D-5(4) -> F-7(6)), 543 nm (D-5(4) -> F-7(6)), and 589 nm (D-5(4) -> F-7(4)), or from Tm3+ at 478 nm ((1)G(4) -> H-3(6)), and 511 mn (D-1(2) -> H-3(5)) were detected. Intensity of emission as function of applied voltage and current-voltage characteristic are shown and discussed. (c) 2005 Elsevier B.V. All rights reserved.