Otro
Electrostatic force microscopy as a tool to estimate the number of active potential barriers in dense non-Ohmic polycrystalline SnO2 devices
Registro en:
Applied Physics Letters. Melville: Amer Inst Physics, v. 89, n. 15, 3 p., 2006.
0003-6951
10.1063/1.2354483
WOS:000241247900051
WOS000241247900051.pdf
Autor
Vasconcelos, J. S.
Vasconcelos, N. S. L. S.
Orlandi, Marcelo Ornaghi
Bueno, Paulo Roberto
Varela, José Arana
Longo, Elson
Barrado, C. M.
Leite, E. R.
Resumen
In the present work, electroactive grain boundaries of highly dense metal oxide SnO2-based polycrystalline varistors were determined by electrostatic force microscopy (EFM). The EFM technique was applied to identify electroactive grain boundaries and thus estimate the amount of active grain boundary, which, in the metal oxide SnO2-based varistor, was calculated at around 85%, i.e., much higher than that found in traditional metal oxide ZnO-based varistors. The mean potential barrier height value obtained from the EFM analysis was in complete agreement with the values calculated from the C-V measurements, together with a complex capacitance plane analysis that validates the methodology proposed here. (c) 2006 American Institute of Physics.