Surface morphology and structural modification induced by femtosecond pulses in hydrogenated amorphous silicon films

dc.contributorUniversidade de São Paulo (USP)
dc.contributorUniversidade Estadual Paulista (Unesp)
dc.contributorUniversidade Estadual Feira de Santana (UEFS)
dc.creatorAlmeida, G. F. B.
dc.creatorCardoso, M. R.
dc.creatorAoki, P. H. B. [UNESP]
dc.creatorLima, J. J. D.
dc.creatorCosta, L. da F.
dc.creatorRodrigues, C. A.
dc.creatorConstantino, C. J. L. [UNESP]
dc.creatorMendonca, C. R.
dc.date2015-10-22T07:19:06Z
dc.date2015-10-22T07:19:06Z
dc.date2015-03-01
dc.date.accessioned2023-09-12T07:04:01Z
dc.date.available2023-09-12T07:04:01Z
dc.identifierhttp://www.ingentaconnect.com/content/asp/jnn/2015/00000015/00000003/art00092?token=004e11e945a666f3a7b6c42316a425b6b654c7d663c49264f655d375c6b6876305021e87780ea2
dc.identifierJournal Of Nanoscience And Nanotechnology. Valencia: Amer Scientific Publishers, v. 15, n. 3, p. 2495-2500, 2015.
dc.identifier1533-4880
dc.identifierhttp://hdl.handle.net/11449/129841
dc.identifier10.1166/jnn.2015.9820
dc.identifierWOS:000345054200092
dc.identifier7384168674539702
dc.identifier0000-0003-4701-6408
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/8779170
dc.descriptionThis work investigates the modification, resulting from fs-laser irradiation (150 fs, 775 nm and 1 kHz), on the structure and surface morphology of hydrogenated amorphous silicon (a-Si:H) thin films. The sample morphology was studied by performing a statistical analyzes of atomic force microscopy images, using a specially developed software that identifies and characterizes the domains (spikes) produced by the laser irradiation. For a fluence of 3.1 MJ/m(2), we observed formation of spikes with smaller average height distribution, centered at around 15 nm, while for fluencies higher than 3.7 MJ/m(2) aggregation of the produced spikes dominates the sample morphology. On the other hand, Raman spectroscopy revealed that a higher crystalline fraction (73%) is obtained for higher fluences (>3.1 MJ/m(2)), which is accompanied by a decrease in the size of the produced crystals. Therefore, such results indicate that there is a trade-off between the spike distribution, crystallization fraction and size of the nanocrystals attained by laser irradiation, which has to be taken into account when using such approach for the development of devices.
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.descriptionConselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
dc.descriptionAir Force Office of Scientific Research
dc.descriptionUniversidade de São Paulo (USP), Instituto de Física de São Carlos, BR-13560970 São Carlos, SP, Brasil
dc.descriptionUniversidade Estadual Paulista (UNESP), Faculdade de Ciências e Tecnologia (FCT), BR-19060900 Presidente Prudente, SP, Brasil
dc.descriptionUniversidade Estadual de Feira de Santana, Departamento de Ciências Exatas, BR-44031460 Feira de Santana, BA, Brasil
dc.descriptionUniversidade Estadual Paulista (UNESP), Faculdade de Ciências e Tecnologia (FCT), BR-19060900 Presidente Prudente, SP, Brasil
dc.descriptionFAPESP: 2011/12399-0
dc.descriptionAir Force Office of Scientific Research: FA9550-12-1-0028
dc.format2495-2500
dc.languageeng
dc.publisherAmer Scientific Publishers
dc.relationJournal Of Nanoscience And Nanotechnology
dc.relation1.354
dc.relation0,326
dc.rightsAcesso restrito
dc.sourceWeb of Science
dc.subjectMicromachining
dc.subjectFemtosecond pulses
dc.subjectAmorphous silicon
dc.subjectSurface morphology
dc.titleSurface morphology and structural modification induced by femtosecond pulses in hydrogenated amorphous silicon films
dc.typeArtigo


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