Formation of SiC by radiative association

dc.contributorUniversidade Estadual Paulista (UNESP)
dc.creatorAndreazza, C. M.
dc.creatorVichietti, R. M.
dc.creatorMarinho, E. P.
dc.date2013-09-30T18:50:35Z
dc.date2014-05-20T14:16:25Z
dc.date2016-10-25T17:39:30Z
dc.date2013-09-30T18:50:35Z
dc.date2014-05-20T14:16:25Z
dc.date2016-10-25T17:39:30Z
dc.date2009-12-21
dc.date.accessioned2017-04-05T22:21:50Z
dc.date.available2017-04-05T22:21:50Z
dc.identifierMonthly Notices of The Royal Astronomical Society. Malden: Wiley-blackwell Publishing, Inc, v. 400, n. 4, p. 1892-1896, 2009.
dc.identifier0035-8711
dc.identifierhttp://hdl.handle.net/11449/24945
dc.identifierhttp://acervodigital.unesp.br/handle/11449/24945
dc.identifier10.1111/j.1365-2966.2009.15589.x
dc.identifierWOS:000272532100022
dc.identifierWOS000272532100022.pdf
dc.identifierhttp://dx.doi.org/10.1111/j.1365-2966.2009.15589.x
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/869899
dc.descriptionRate coefficients for radiative association of silicon and carbon atoms to form silicon carbide molecule (SiC) are estimated. The radiative association of Si(3P) and C(3P) atoms mainly occurs through the C3 Pi state followed by radiative decay to the X3 Pi state. For the temperature range of 300-14 000 K, the rate coefficients slowly increase with temperature and they can be expressed by K(T) = 2.038 x 10-17(T/300)-0.01263 exp(-136.73/T) cm3 s-1.
dc.descriptionFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
dc.descriptionCoordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
dc.languageeng
dc.publisherWiley-Blackwell Publishing, Inc
dc.relationMonthly Notices of the Royal Astronomical Society
dc.rightsinfo:eu-repo/semantics/openAccess
dc.subjectatomic data
dc.subjectatomic process
dc.subjectcircumstellar matter
dc.subjectISM: molecules
dc.titleFormation of SiC by radiative association
dc.typeOtro


Este ítem pertenece a la siguiente institución