| dc.creator | Yesilgul, Unal | |
| dc.creator | Ungan, Fatih | |
| dc.creator | Duque Echeverri, Carlos Alberto | |
| dc.creator | Kasapoglu, Esin | |
| dc.creator | Sari, H. | |
| dc.creator | Sokmen, Ismail | |
| dc.date | 2020-01-14T03:42:21Z | |
| dc.date | 2020-01-14T03:42:21Z | |
| dc.date | 2012 | |
| dc.date.accessioned | 2023-08-28T19:49:06Z | |
| dc.date.available | 2023-08-28T19:49:06Z | |
| dc.identifier | S. Sakiroglu, U. Yesilgul, F. Ungan, C.A. Duque-Echeverri, E. Kasapoglu, H. Sari, and I. Sokmen, “Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field,” Elsevier, vol. 132, no. 6, pp. 1584-1588, 2012. http://doi.org/10.1016/j.jlumin.2012.01.060 | |
| dc.identifier | 0022-2313 | |
| dc.identifier | http://hdl.handle.net/10495/13127 | |
| dc.identifier | 10.1016/j.jlumin.2012.01.060 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/8469059 | |
| dc.description | ABSTRACT: We perform theoretical calculations for the band structure of semiconductor superlattice under intense high-frequency laser field. In the frame of the non-perturbative approach, the laser effects are included via laser-dressed potential. Results reveal that an intense laser field creates an additional geometric confinement on the electronic states. Numerical results show that when tuning the strength of the laser field significant changes come in the electronic energy levels and density of states. | |
| dc.format | 4 | |
| dc.format | application/pdf | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.publisher | Elsevier | |
| dc.publisher | Holanda | |
| dc.relation | Journal of Luminescence | |
| dc.rights | Atribución-NoComercial-SinDerivadas 2.5 Colombia | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/licenses/by-nc-nd/2.5/co/ | |
| dc.rights | http://purl.org/coar/access_right/c_abf2 | |
| dc.rights | https://creativecommons.org/licenses/by-nc-nd/4.0/ | |
| dc.subject | Intense laser fields | |
| dc.subject | Laser-dressed potential | |
| dc.subject | Superlattices | |
| dc.subject | Intensidad del campo del láser | |
| dc.title | Electronic band structure of GaAs/AlxGa1−xAs superlattice in an intense laser field | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/publishedVersion | |
| dc.type | http://purl.org/coar/resource_type/c_2df8fbb1 | |
| dc.type | https://purl.org/redcol/resource_type/ART | |
| dc.type | Artículo de investigación | |
