info:eu-repo/semantics/article
Identifying the Diffusion and Drift Conduction Regions in MOSFETs Through S-Parameters
Autor
Reydezel Torres Torres
Edmundo Antonio Gutiérrez Domínguez
Resumen
A method for characterizing low-voltage-operating MOSFETs through small-signal S-parameters is introduced. The method allows extracting the drain-to-source channel resistance at zero drain-to-source voltage, which is not feasible with dc conventional methods. Furthermore, this zero drain-to-source voltage RF method identifies the gate voltage where the diffusion and drift conduction mechanisms overlap. This is really helpful in defining the appropriate subthreshold drain current model and its corresponding impact at RF operating conditions. The proposed experimental RF method is validated and compared with a dc-based method for an 80-nm-channel-length nMOSFET.
Ítems relacionados
Mostrando ítems relacionados por Título, autor o materia.
-
Compendio de innovaciones socioambientales en la frontera sur de México
Adriana Quiroga -
Caminar el cafetal: perspectivas socioambientales del café y su gente
Eduardo Bello Baltazar; Lorena Soto_Pinto; Graciela Huerta_Palacios; Jaime Gomez -
Material de empaque para biofiltración con base en poliuretano modificado con almidón, metodos para la manufactura del mismo y sistema de biofiltración
OLGA BRIGIDA GUTIERREZ ACOSTA; VLADIMIR ALONSO ESCOBAR BARRIOS; SONIA LORENA ARRIAGA GARCIA