Silicon technology dominates the electronics industry today, so it is highly desirable the development of silicon-based components compatible with silicon technology, allowing integration of electrical and optical components on a single chip. One promising approach to the development of a silicon based light emitter is Silicon Rich Oxide (SRO), also called offstoichiometric silicon oxide. The interest on the optical properties of this material has grown since it was demonstrated that SRO films subjected to high-temperature annealing exhibit efficient photoluminescence (PL) (Iacona et al., 2000; Shimizu-Iwayama et al., 1996). At present, different techniques have been employed to produce SRO films, these include plasma enhanced chemical vapor deposition (PECVD) (Pai et al., 1986), low pressure chemical vapor deposition (LPCVD) (Dong et al., 1978), silicon implantation into thermal oxide (SITO) (Pavesi et al., 2000), reactive sputtering (Hanaizumi et al., 2003) and others. An indicator of the Si content in this material is the parameter R0, which is the ratio of the partial pressure of the precursor gases (in this case, N2O/SiH4) when it is prepared by gas phase deposition methods like CVD (Chemical Vapor Deposition). Silicon excess ranging from 17% to 0% can be obtained varying the R0 from 3 to 100. Among CVD methods, the low pressure chemical vapor deposition (LPCVD) is a very convenient approach for the deposition of SRO films since it allows an exact variation of the Si content and produces higher PL than other methods. Different applications of SRO have been proposed, such as: visible light emission devices (Shimizu-Iwayama et al., 1996), non-volatile or electrically alterable memory devices (Calleja et al., 1998), surge suppressors (Aceves et al., 1999), microsensors (Aceves et al., 2001), and single electron devices (Yu et al., 2003).