Photodetectors are essential elements in optoelectronics because they are the communication via between light and electronics. There are several kinds of photodetectors but nowadays the most used are semiconductor photodetectors due to its versatility when detecting light of specific wavelengths efficiently and with fast response velocity. Most semiconductor photodetectors are fabricated with striped interdigitated electrodes over a semiconductor substrate (MSM photodetectors), in order that we have periodicity between metallic electrodes and semiconductor regions on top photodetector surface. These kind of photodetectors are widely used in communications due to its faster response compared to other photodetector structures1’2’3 and they are a very good for UV detection4’5. Light is detected when it reaches the semiconductor region by creating charge carriers (holes and electrons) that are then transported to the electrodes due to an applied voltage difference6. Interdigitated electrodes are used to increase the active region area (semiconductor) while optimizing the electric fields between electrodes for carrier collection meaning high velocity response and sensitivity, but unfortunately it also provokes that certain amount of light get back reflected by the electrodes surfaces. Many methods to compensate this loss have been proposed, some examples are: using metallic gratings