| dc.creator | SION FEDERICO OLIVE MENDEZ | |
| dc.date | 2013 | |
| dc.date.accessioned | 2023-07-21T15:31:46Z | |
| dc.date.available | 2023-07-21T15:31:46Z | |
| dc.identifier | http://cimav.repositorioinstitucional.mx/jspui/handle/1004/2225 | |
| dc.identifier.uri | https://repositorioslatinoamericanos.uchile.cl/handle/2250/7728130 | |
| dc.description | The development of active spintronic devices, such as spin-transistors and spindiodes,
calls for new materials that are able to efficiently inject the spin-polarized current
into group-IV semiconductors (Ge and Si). In this paper we review recent achievements
of the synthesis and the magnetic properties of Mn5Ge3/Ge and carbon-doped
Mn5Ge3/Ge heterostructures. We show that high crystalline quality and threadingdislocation
free Mn5Ge3 films can be epitaxially grown on Ge(111) substrates despite
the existence of a misfit as high as 3.7% between two materials. We have investigated
the effect of carbon doping in epitaxial Mn5Ge3 films and show that incorporation of
carbon into interstitial sites of Mn5Ge3 can allow not only enhancement of the magnetic
properties but also an increase of the thermal stability of Mn5Ge3. Finally, toward the
perspective to realize Ge/Mn5Ge3/Ge multilayers for spintronic applications, we shall
show how to use carbon to prevent Mn out-diffusion from Mn5Ge3 during Ge overgrowth
on top of Mn5Ge3/Ge heterostructures. The above results open the route to develop
spintronic devices based on Mn5Ge3Cx/Ge heterostructures using a Schottky contact
without needing an oxide tunnel barrier at the interface. | |
| dc.format | application/pdf | |
| dc.language | eng | |
| dc.rights | info:eu-repo/semantics/openAccess | |
| dc.rights | http://creativecommons.org/about/cc0/ | |
| dc.subject | info:eu-repo/classification/Mn5Ge3/Ge(111) | |
| dc.subject | info:eu-repo/classification/cti/2 | |
| dc.subject | info:eu-repo/classification/cti/23 | |
| dc.subject | info:eu-repo/classification/cti/2399 | |
| dc.subject | info:eu-repo/classification/cti/239999 | |
| dc.subject | info:eu-repo/classification/cti/239999 | |
| dc.title | Epitaxial growth and magnetic properties of Mn5Ge3/Ge and Mn5Ge3Cx/Ge heterostructures for spintronic applications | |
| dc.type | info:eu-repo/semantics/article | |
| dc.type | info:eu-repo/semantics/submittedVersion | |
