dc.contributorSu, Zhiguo
dc.creatorRafael Valdivia, Guillermo
dc.date.accessioned2019-04-02T21:20:52Z
dc.date.accessioned2023-06-01T13:53:42Z
dc.date.available2019-04-02T21:20:52Z
dc.date.available2023-06-01T13:53:42Z
dc.date.created2019-04-02T21:20:52Z
dc.date.issued2017-01-19
dc.identifierG. Rafael-Valdivia and Z. Su, "Non-linear modeling for low and high power microwave transistors," 2016 46th European Microwave Conference (EuMC), London, 2016, pp. 847-850. doi: 10.1109/EuMC.2016.7824476 keywords: {equivalent circuits;gallium arsenide;III-V semiconductors;microwave transistors;nonlinear modeling;microwave transistors;GaAs devices;GaN devices;LDMOS devices;drain current functions;equivalent circuits;frequency dispersion;GaAs;GaN;Mathematical model;Microwave circuits;Microwave transistors;Pulse measurements;Radio frequency;Electromagnetic heating;Pulsed measurements;microwave transistors;trapping effects;device level modeling;GaAs;GaN;LDMOS}, URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7824476&isnumber=7824247
dc.identifierhttp://repositorio.ulasalle.edu.pe/handle/20.500.12953/65
dc.identifierIEEE Xplore digital Library
dc.identifier10.1109/EuMC.2016.7824476
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/6517124
dc.description.abstractNew generation of communications systems will demand the use of low power devices in mesh configuration. This work presents a new characterization procedure for those devices in order to predict their behaviour before the implementation saving time and cost.
dc.languageeng
dc.publisherIEEE Xplore Digital Library
dc.relationhttps://ieeexplore.ieee.org/document/7824476/authors#authors
dc.relationinfo:eu-repo/semantics/article
dc.rightshttps://creativecommons.org/licenses/by-nc-nd/4.0/
dc.rightsinfo:eu-repo/semantics/restrictedAccess
dc.sourceRepositorio Institucional - ULASALLE
dc.subjectMathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heating
dc.titleNon-linear modeling for low and high power microwave transistors
dc.typeinfo:eu-repo/semantics/article


Este ítem pertenece a la siguiente institución