Non-linear modeling for low and high power microwave transistors

Rafael Valdivia, Guillermo

info:eu-repo/semantics/article

Fecha

2017-01-19

Registro en:

G. Rafael-Valdivia and Z. Su, "Non-linear modeling for low and high power microwave transistors," 2016 46th European Microwave Conference (EuMC), London, 2016, pp. 847-850. doi: 10.1109/EuMC.2016.7824476 keywords: {equivalent circuits;gallium arsenide;III-V semiconductors;microwave transistors;nonlinear modeling;microwave transistors;GaAs devices;GaN devices;LDMOS devices;drain current functions;equivalent circuits;frequency dispersion;GaAs;GaN;Mathematical model;Microwave circuits;Microwave transistors;Pulse measurements;Radio frequency;Electromagnetic heating;Pulsed measurements;microwave transistors;trapping effects;device level modeling;GaAs;GaN;LDMOS}, URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7824476&isnumber=7824247

http://repositorio.ulasalle.edu.pe/handle/20.500.12953/65

IEEE Xplore digital Library

10.1109/EuMC.2016.7824476

https://repositorioslatinoamericanos.uchile.cl/handle/2250/6517124

Autor

Rafael Valdivia, Guillermo

Institución

Universidad La Salle (Perú)

Resumen

New generation of communications systems will demand the use of low power devices in mesh configuration. This work presents a new characterization procedure for those devices in order to predict their behaviour before the implementation saving time and cost.

Materias

Mathematical model , Microwave circuits , Microwave transistors , Pulse measurements , Radio frequency , Electromagnetic heating

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