Artigo
Thermal neutron induced upsets in 28nm SRAM
Fecha
2019Registro en:
AGUIAR, V A P; MORALLES, M; BENEVENUTI, F; GUAZZELLI, M. A. ; MEDINA, N H; ADDED, N; MACCHIONE, E L A; ALBERTON, S G; RODRIGUES, C L; SILVA, T F; ZAHN, G S; GENEZINI, F A. Thermal neutron induced upsets in 28nm SRAM. JOURNAL OF PHYSICS. CONFERENCE SERIES, v. 1291, p. 1-4, 2019.
1742-6588
Autor
AGUIAR, V. A. P.
MEDINA, N. H.
ADDED, N.
MACCHIONE, E. L. A.
ALBERTON, S. G.
RODRIGUES, C. L.
SILVA, T. F.
ZAHN, G. S.
GENEZINI, F. A.
MORALLES, M.
BENEVENUTI, F.
GUAZZELLI, Marcilei Aparecida
Resumen
In this work, we present the first results of static tests in a 28nm SRAM under thermal neutron irradiation from the IPEN/IEA-R1 research reactor. The SRAM used was the configuration memory of a Xilinx Zynq-7000 FPGA and the ECC frame was used to detect bit-flips. It was obtained a SEU cross-section of 9.2(21) × 10−16 cm2/bit, corresponding to a FIT/Mb of 12(5), in accordance with expected results. The most probable cause of SEU in this device are 10B contamination on tungsten contacts.