dc.creatorTorres Álvarez, Fabián
dc.creatorGak Szollosy, Joel
dc.creatorArnaud Maceira, Alfredo
dc.creatorMíguez, Matías
dc.date.accessioned2022-09-01T21:29:37Z
dc.date.accessioned2022-11-15T22:30:27Z
dc.date.available2022-09-01T21:29:37Z
dc.date.available2022-11-15T22:30:27Z
dc.date.created2022-09-01T21:29:37Z
dc.date.issued2020
dc.identifierhttps://hdl.handle.net/10895/1785
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/5198617
dc.description.abstractThe design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm 2 without pads.
dc.languageen
dc.publisherIEEE
dc.relationArgentine Conference on Electronics (CAE), 2020.
dc.subjectCircuitos integrados
dc.subjectAtenuador (Electrónica)
dc.subjectSistemas eléctricos de potencia
dc.titleAn Integrated 350V Dimmer
dc.typeArtículo


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