Article
PZT films grown by RF sputtering at high oxygen pressure
Fecha
2003Autor
Blanco, O.
Heiras, J.
Siqueiros, J.M.
Martinez, E.
Castellanos-Guzman, A.G.
Institución
Resumen
The growth of lead zirconate-titanate (PZT) thin films by RF sputtering at high oxygen pressure was reported. The films were deposited on SrTiO3 and silicon substrates. The films grown were fully oxygenated and Pb composition gradient through the film thickness was small. It was found that the structural characteristics, root mean square (RMS) toughness, grain size distribution and ferroelectrics properties depended on the deposition conditions.