Relation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon

dc.creatorWeisz, S. Z.
dc.creatorRamírez Porras, Arturo
dc.creatorGómez, Manuel
dc.creatorMany, A.
dc.creatorGoldstein, Yehuda
dc.creatorSavir, Esther
dc.date.accessioned2020-01-31T21:49:05Z
dc.date.accessioned2022-10-19T23:52:20Z
dc.date.available2020-01-31T21:49:05Z
dc.date.available2022-10-19T23:52:20Z
dc.date.created2020-01-31T21:49:05Z
dc.date.issued1997
dc.identifierhttps://www.sciencedirect.com/science/article/pii/S0022231396004383
dc.identifier0022-2313
dc.identifierhttps://hdl.handle.net/10669/80437
dc.identifier10.1016/S0022-2313(96)00438-3
dc.identifier.urihttps://repositorioslatinoamericanos.uchile.cl/handle/2250/4525175
dc.description.abstractMeasurements of photoluminescence, electronic surface states and effective surface area, at various stages of the anodization process, are presented. The results show a behavior different from that observed on n-type porous Si.
dc.languageen_US
dc.sourceJournal of Luminescence 72-74, pp.729-730
dc.subjectPhotoluminescence
dc.subjectSurface States
dc.subjectPorous silicon
dc.titleRelation between Luminescence and Electronic Surface Characteristics in p-type Porous Silicon
dc.typeartículo científico


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