info:eu-repo/semantics/article
6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process
Fecha
2018-10Registro en:
García Inza, Mariano Andrés; Cassani, María Victoria; Carbonetto, Sebastián Horacio; Casal, M.; Redin, Eduardo Gabriel; et al.; 6MV LINAC characterization of a MOSFET dosimeter fabricated in a CMOS process; Pergamon-Elsevier Science Ltd; Radiation Measurements; 117; 10-2018; 63-69
1350-4487
CONICET Digital
CONICET
Autor
García Inza, Mariano Andrés
Cassani, María Victoria
Carbonetto, Sebastián Horacio
Casal, M.
Redin, Eduardo Gabriel
Faigon, Adrián Néstor
Resumen
This paper presents the characterization of a thick gate oxide MOSFET for radiotherapy in-vivo dosimetry. The device is an N-channel transistor fabricated in a standard CMOS process using the Field Oxide as gate insulator. Sensitivity, fading, gate bias voltage dependence, percentage depth dose and angular response were assessed using a 6 MV LINAC. Experimental results showed that it is possible to estimate dose with a 3% uncertainty in a range up to 85 Gy with an average sensitivity of 62 mV/Gy. The measurement system noise equivalent dose is 3 mGy.