Photoluminescence (PL) properties of thin and thick silicon-rich oxide (SRO) and silicon implanted SRO (SI-SRO) films with different silicon excess fabricated by low pressure chemical vapor deposition (LPCVD) were studied. The effects of the annealing temperature and silicon implantation on the PL were also studied. Maximum luminescence intensity was observed with an annealing temperature of 1150 and 1100 ◦C for thin and thick SRO films, respectively. The PL intensity is strongly enhanced when SRO films are implanted with silicon, especially for thin SRO films. Thin SI-SRO films emit up to six times more than non-implanted films, meanwhile the PL in thick SI-SRO films is only improved less than two times. Therefore, thin SI-SRO films are an interesting alternative for applications such as the fabrication of efficient Si-nps based LEDs.