In this paper, we report and compare the reliability results obtained for W-La 2 O 3 gated Metal-Oxide-Semiconductor (MOS) devices with those of HfO 2-based systems reported in literature. Reliability issues like stress-induced leakage current (SILC), interface-states generation (Dit), threshold voltage shift (ΔVth) and time to breakdown (t bd) were compared and analyzed for both dielectrics in order to obtain a more specific assessment of their resistance to electrical degradation and breakdown.