A photodetector that shows high photocurrent in the ultraviolet and visible wavelengths has been fabricated. The device consists of a metal-oxide-semiconductor (MOS)-like grid structure where the dielectric layer is a silicon-rich oxide (SRO) film. Its fabrication is completely compatible with silicon technology. SRO thin films with 1 to 12% silicon excess were deposited on silicon wafers by low pressure chemical vapour deposition technique. After thermal annealing, silicon nanoagglomerates were created. Current-voltage measurements in dark and under illumination conditions were done to test the devices.