Artigo
Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system
Fecha
2011-12-01Registro en:
Physica B-condensed Matter. Amsterdam: Elsevier B.V., v. 406, n. 23, p. 4381-4386, 2011.
0921-4526
10.1016/j.physb.2011.08.091
WOS:000296872800009
2998503841917815
6446047463034654
0000-0003-3286-9440
Autor
Universidade de São Paulo (USP)
Universidade Federal de Goiás (UFG)
Universidade Estadual Paulista (Unesp)
Resumen
Oxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS2+Ga2O3 (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics. (C) 2011 Elsevier B.V. All rights reserved.