Artículo de revista
Multilayer indium saving ITO thin films produced by sputtering method
Fecha
2020Registro en:
Journal of Alloys and Compounds 827 (2020) 154378
10.1016/j.jallcom.2020.154378
Autor
Voisin, L.
Ohtsuka, M.
Petrovska, S.
Sergiienko, R.
Nakamura, T.
Institución
Resumen
Low volume resistivity and high transmittance. Double-layered structures consisting of very thin layer of conventional indium tin oxide (In2O3-10 mass % SnO2) and indium saving indium-tin oxide (In2O3-50 mass % SnO2) layer were grown by DC sputtering on glass substrates preheated at 523 K. It was found that this method can produce polycrystalline ITO thin films having volume resistivity as low as 281 mu Omega cm, mobility 28 cm(2)/V.s and carrier concentration 5.32 10(20) cm(-3). Average optical transmittances exhibited above 85% in visible range of spectrum. Arithmetical mean height (S-a) and root mean square height (S-q) of films deposited at optimum conditions were 1.09 and 1.40 nm, respectively.