Thesis
MODELADO EN PEQUEÑA SEÑAL DE UN TRANSISTOR DE EFECTO DE CAMPO DE NANOTUBO DE CARBÓN (TECNTC) PARA APLICACIONES EN TELECOMUNICACIONES
Autor
Díaz Albarrán, Luis Miguel
Institución
Resumen
In this work we present a study of static (DC) and dynamic (AC) performance of a single
carbon nanotube field effect transistor (CNTFET) in a coaxial and double gate configuration,
using analytical models to describe the electron transport into the CNTFET transistor, that
allows determinate the device DC performance for both CNTFET. Principal characteristics
in DC are obtained for three carbon nanotube diameter in the case of the coaxial CNTFET
and for three gate length for the double gate CNTFET, from this study the impact of the
geometrical parameters on DC response is determinate.
Starting from DC analyze for both CNTFET, using the small-signal equivalent circuit
model that describe AC performance and ADS software, two figures of merit intrinsic and
extrinsic S21 & ft are calculated for coaxial CNTFET configuration, and intrinsic ft for
double gate CNTFET, the effect of the geometrical parameters in each figure of merit are
observed, at the same time the cut frequency is obtained with the small-signal equivalent
circuit and compare with the intrinsic and extrinsic cut frequency analytical model.