Actas de congresos
On the assessment of electrically active defects in high-mobility materials and devices
Fecha
2017-07-31Registro en:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2016 - Proceedings, p. 300-303.
10.1109/ICSICT.2016.7998903
2-s2.0-85028684734
Autor
Imec
Ghent University
Universidade de São Paulo (USP)
Vanderbilt University
Universidade Estadual Paulista (Unesp)
KU Leuven
Institución
Resumen
A possible strategy for the characterization of grown-in and processing-induced electrically active point and extended defects in high-mobility substrates is presented and illustrated by examples obtained on Ge as a prototype system.