Artículos de revistas
EELS characterization of TiN grown by the DC sputtering technique
Autor
JOSE ALBERTO DUARTE MOLLER
MIGUEL AVALOS BORJA
Institución
Resumen
Titanium nitride thin films were deposited on monocrystalline silicon (mc-Si) substrates by direct current reactive magnetron sputtering. Auger electron spectra (AES) of deposited films at different nitrogen partial pressures, show the typical N KL23L23 and Ti L3M23M23 Auger transition overlapping. Also, changes in the Ti L3M23M45 Auger transition peak are observed. X-ray diffraction and high resolution electron microscopy (HRTEM) of a golden color TiN/ mc-Si sample, reveal a preferential polycrystalline columnar growth in the k111l orientation. This sample was also analyzed by electron energy-loss spectroscopy (EELS). The N/Ti elemental ratio is slightly different to the value determined by AES. Atomic distribution around the N atoms is in agreement with that expected from the N atom in the fcc unit cell of TiN. This distribution was obtained via an extended energy-loss fine structure (EXELFS) analysis from EELS spectra.
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