Artículos de revistas
Topological States Ruled by Stacking Faults in Bi2Se3 and Bi2Te3.
Fecha
2013-03Registro en:
Bulletin of the American Physical Society, Maryland, v.58, n.1, MAR, 2013
Autor
Rocha, Leandro Seixas
Abdalla, Leonardo Batoni
Schmidt, Tome
Fazzio, Adalberto
Miwa, Roberto
Institución
Resumen
Extended defects like stacking faults (SF) can originate topologically protected metallic
states in bulk topological insulators (TI). These induced topological states are a response to the weakening of the inter-layer van der Waals interactions due to the SF
defect. In TI thin lms the degeneracy of Dirac bands of opposite surfaces can be
lifted upon the formation of SF defects. Such slab asymmetry can promote a net
spin current, absent of backscattering processes, in thin fi lm made of TIs. These
results have been obtained by fully relativistic first principles calculations.