Actas de congresos
Diffuse Interface Modeling For Electromigration Induced Void Growth
Registro en:
978-1-5090-2788-0
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). Ieee, p. , 2016.
WOS:000392469000029
10.1109/SBMicro.2016.7731341
Autor
Queiroz
L. M. G. M.; de Orio
R. L.
Institución
Resumen
Modeling and simulation of the temporal evolution of electromigration voids are critical to evaluate the reliability of interconnects of modern integrated circuits. In this work, the diffuse interface model is applied to investigate two different mechanisms of the void evolution due to electromigration. Two-dimensional numerical simulations have been performed and interconnect resistance increase has been monitored. The results recovered the main features of the electromigration induced failure observed in experiments. 31st Symposium on Microelectronics Technology and Devices (SBMicro) AUG 29-SEP 03, 2016 Belo Horizonte, BRAZIL