Actas de congresos
Electrolyte-insulator-semiconductor Structure (eis) With Tio2 Thin Film For Pb+ Detecting
Registro en:
978-1-5090-2788-0
2016 31st Symposium On Microelectronics Technology And Devices (sbmicro). Ieee, p. , 2016.
WOS:000392469000017
Autor
Cesar
R. R.; Barros
A. D.; Doi
I.; Diniz
J. A.; Swart
J. W.
Institución
Resumen
Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) In this work Electrolyte-Insulator-Semiconductor (EIS) device has been developed for pH and lead (Pb+) measurements. As dielectric material and sensitive membrane was chosen titanium dioxide (TiO2) thin film. This film was obtained by sputtering, and was structurally characterized by Atomic Force Microscopy, Raman and Ellipsometry which revealed that the films present rutile and anatase crystal structure and 1.17 RMS roughness. MOS capacitors were fabricated to make the electrical characterization of TiO2 thin films and to determine the annealing time that leads to the best thin film properties, defined by high dielectric constant value (high-k), lower charge density (Q(0)/q) and flat-band voltage (V-FB) around -0.9V. For electrical measurement of EIS was used Capacitance x Voltage curve (CxV curve) using different pH and lead (Pb+) solutions. From the flat band voltage (V-FB) of the CxV curves was possible to determine the sensitivity of 96mV/pH for pH measurements and sensitivity of 30mV/ppm for different lead concentration in solution measurements. CAPES CNPq Namitec PodiTrodi Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) 31st Symposium on Microelectronics Technology and Devices (SBMicro) AUG 29-SEP 03, 2016 Belo Horizonte, BRAZIL