Artículos de revistas
Surface Functionalization Of Two-dimensional Metal Chalcogenides By Lewis Acid-base Chemistry
Registro en:
Nature Nanotechnology. Nature Publishing Group, v. 11, p. 465 - +, 2016.
1748-3387
1748-3395
WOS:000376163300018
10.1038/NNANO.2015.323
Autor
Lei
Sidong; Wang
Xifan; Li
Bo; Kang
Jiahao; He
Yongmin; George
Antony; Ge
Liehui; Gong
Yongji; Dong
Pei; Jin
Zehua; Brunetto
Gustavo; Chen
Weibing; Lin
Zuan-Tao; Baines
Robert; Galvao
Douglas S.; Lou
Jun; Barrera
Enrique; Banerjee
Kaustav; Vajtai
Robert; Ajayan
Pulickel
Institución
Resumen
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Precise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+ (n)(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device. 11 5 465 + FAME, one of six centres of STARnet, a Semiconductor Research Corporation program - MARCO DARPA MURI ARO program [W911NF-11-1-0362] Air Force Office of Scientific Research [FA9550-14-1-0268] Center for Computational Engineering and Sciences at Unicamp through the FAPESP/CEPID grant [2013/08293-7] Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)