Artículos de revistas
Slow Light In Semiconductor Quantum Dots: Effects Of Non-markovianity And Correlation Of Dephasing Reservoirs
Registro en:
Slow Light In Semiconductor Quantum Dots: Effects Of Non-markovianity And Correlation Of Dephasing Reservoirs. Amer Physical Soc, v. 92, p. DEC-2015.
1098-0121
WOS:000367378400002
10.1103/PhysRevB.92.235446
Autor
Mogilevtsev
D.; Reyes-Gomez
E.; Cavalcanti
S. B.; Oliveira
L. E.
Institución
Resumen
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) A theoretical investigation on slow light propagation based on electromagnetically induced transparency in a three-level quantum-dot system is performed including non-Markovian effects and correlated dephasing reservoirs. It is demonstrated that the non-Markovian nature of the process is quite essential even for conventional dephasing typical of quantum dots leading to significant enhancement or inhibition of the group velocity slowdown factor as well as to the shifting and distortion of the transmission window. Furthermore, the correlation between dephasing reservoirs may also either enhance or inhibit non-Markovian effects. 92 23
National Academy of Sciences of Belarus through the program "Convergence," Russian Quantum Center (Skolkovo) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Scientific Colombian Agencies Estrategia de Sostenibilidad CODI University of Antioquia Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) FAEPEX-UNICAMP Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) FAPESP [2014/21188-0, 2012/51691-0]