Artículos de revistas
Ammonia as an active doping source gas of hydrogenated amorphous germanium films
Registro en:
Physical Review B. American Physical Soc, v. 53, n. 19, n. 12566, n. 12569, 1996.
1098-0121
WOS:A1996UM47800009
10.1103/PhysRevB.53.12566
Autor
Chambouleyron, I
Campomanes, R
Institución
Resumen
In this work the electrical properties of nitrogen-doped hydrogenated amorphous germanium films (a-Ge:H) using ammonia (NH3) as a gaseous doping source are reported. The results are compared with those of N-doped a-Ge:H films using N-2 as a source gas. The doping mechanisms appear to be similar in both cases. However, the doping efficiency of NH3 is smaller than that of N-2. The use of NH3 also induces a very large topological disorder. The present results give support to the view that active N doping in a-Ge:H originates from overcoordinated nitrogen atoms (N-4(+)) without the need of one or more hydrogen neighbors. 53 19 12566 12569