Influence of the substrate thickness and radio frequency on the deposition rate of amorphous hydrogenated carbon a-C : H films

dc.creatorBalachova, OV
dc.creatorAlves, MAR
dc.creatorSwart, JW
dc.creatorBraga, ES
dc.creatorCescato, L
dc.date1999
dc.date42064
dc.date2014-12-02T16:30:05Z
dc.date2015-11-26T17:38:44Z
dc.date2014-12-02T16:30:05Z
dc.date2015-11-26T17:38:44Z
dc.date.accessioned2018-03-29T00:20:24Z
dc.date.available2018-03-29T00:20:24Z
dc.identifierJournal Of Applied Physics. Amer Inst Physics, v. 85, n. 6, n. 3345, n. 3347, 1999.
dc.identifier0021-8979
dc.identifierWOS:000079021200050
dc.identifier10.1063/1.369681
dc.identifierhttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/80466
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/80466
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/80466
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1286292
dc.descriptionAmorphous hydrogenated carbon a-C:H films were deposited on silicon and quartz substrates in a parallel plate reactor by radio frequency (rf) plasma-enhanced chemical vapor deposition. The deposition rates of the films have been studied in the low-frequency region of the electric field. The Si and quartz substrates of different thickness have been used. The rf and substrate thickness dependencies of the deposition rates are discussed in terms of a theory of ion bombardment. (C) 1999 American Institute of Physics. [S0021-8979(99)07506-4].
dc.description85
dc.description6
dc.description3345
dc.description3347
dc.languageen
dc.publisherAmer Inst Physics
dc.publisherMelville
dc.publisherEUA
dc.relationJournal Of Applied Physics
dc.relationJ. Appl. Phys.
dc.rightsaberto
dc.sourceWeb of Science
dc.subjectChemical-vapor-deposition
dc.subjectRf Glow-discharge
dc.subjectThin-films
dc.subjectPlasma
dc.subjectDiamond
dc.subjectGrowth
dc.titleInfluence of the substrate thickness and radio frequency on the deposition rate of amorphous hydrogenated carbon a-C : H films
dc.typeArtículos de revistas


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