Artículos de revistas
Influence of substrate temperature on formation of an SiC buffer layer by reaction of Si(100) with silane-methane plasma
Registro en:
Semiconductor Science And Technology. Iop Publishing Ltd, v. 15, n. 12, n. 1115, n. 1118, 2000.
0268-1242
WOS:000165830800006
10.1088/0268-1242/15/12/303
Autor
Bittencourt, C
Institución
Resumen
A clean Si(100) surface was reacted at temperatures over the range 750-1050 degreesC with methane-silane-hydrogen plasma. The reaction products on the surface were investigated using x-ray photoelectron spectroscopy, reflection high-energy electron diffraction, infrared absorption spectroscopy and atomic force microscopy. The results indicate that using substrate temperatures higher than 800 degreesC the reaction products on the surface are epitaxial islands that have a beta -silicon carbide crystalline structure. For lower temperatures a more planar layer with a loss in the crystalline quality was observed. 15 12 1115 1118