Artículos de revistas
Carrier saturation in multiple quantum well metallo-dielectric semiconductor nanolaser: Is bulk material a better choice for gain media?
Registro en:
Optics Express. Optical Soc Amer, v. 21, n. 22, n. 25985, n. 25998, 2013.
1094-4087
WOS:000327007800059
10.1364/OE.21.025985
Autor
Vallini, F
Gu, Q
Kats, M
Fainman, Y
Frateschi, NC
Institución
Resumen
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Although multi quantum well (MQW) structure is frequently suggested as the appropriate medium for providing optical gain in nanolasers with low threshold current, we demonstrate that in general bulk gain medium can be a better choice. We show that the high threshold gain required for nanolasers demands high threshold carrier concentrations and therefore a highly degenerate condition in which the barriers between the quantum wells are heavily pumped. As a result, there occurs spontaneous emission from the barrier in very dissipative low Q modes or undesired confined higher Q modes with resonance wavelengths close to the barrier bandgap. This results in a competition between wells and barriers that suppresses lasing. A complete model involving the optical properties of the resonant cavity combined with the carrier injection in the multilayer structure is presented to support our argument. With this theoretical model we show that while lasing is achieved in the nanolaser with bulk gain media, the nanolaser with MQW gain structure exhibits well emission saturation due to the onset of barrier emission. (C) 2013 Optical Society of America 21 22 25985 25998 Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Center for Optics and Photonics (CePOF) [05/51689-2] National Institute for Science and Technology (FOTONICOM) [08 /57857-2] Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Defense Advanced Research Projects Agency (DARPA) National Science Foundation (NSF) NSF through Center for Integrated Access Networks (CIAN) NSF ERC [EEC-0812072] Cymer Corporation U.S. Army Research Office Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Center for Optics and Photonics (CePOF) [05/51689-2] National Institute for Science and Technology (FOTONICOM) [08 /57857-2] NSF through Center for Integrated Access Networks (CIAN) NSF ERC [EEC-0812072]