Artículos de revistas
Interface roughness localization in quantum wells and quantum wires
Registro en:
Physical Review B. American Physical Soc, v. 58, n. 15, n. 9876, n. 9880, 1998.
0163-1829
WOS:000076486800055
10.1103/PhysRevB.58.9876
Autor
Rasnik, I
Rego, LGC
Marquezini, MV
Triques, ALC
Brasil, MJSP
Brum, JA
Cotta, MA
Institución
Resumen
We studied the effects of interface localization due to microroughness in a sample presenting a quantum well and a quantum wire. We measured the magnetoluminescence at different temperatures and analyzed the results with a model where the average microroughness, the magnetic field, and the excitonic effects are treated within the same level of approximation. We were able to extract a quantitative estimate for the exciton localization due to microroughness. Our results also demonstrate the efficiency of the temperature to detrap excitons from the interface roughness localization. [S0163-1829(98)03439-0]. 58 15 9876 9880