Artículos de revistas
Intraband absorption in GaAs-(Ga,Al) As variably spaced semiconductor superlattices under crossed electric and magnetic fields
Registro en:
Epl. Epl Association, European Physical Society, v. 104, n. 4, 2013.
0295-5075
1286-4854
WOS:000328882700022
10.1209/0295-5075/104/47008
Autor
Reyes-Gomez, E
Raigoza, N
Oliveira, LE
Institución
Resumen
Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) A theoretical study of the intraband absorption properties of GaAs-Ga1-xAlxAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices. Copyright (C) EPLA, 2013 104 4 Scientific Colombian Agency CODI - University of Antioquia Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) FAEPEX-UNICAMP Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) FAPESP [2012/51691-0]