Artículos de revistas
Non-Markovian damping of Rabi oscillations in semiconductor quantum dots
Registro en:
Journal Of Physics-condensed Matter. Iop Publishing Ltd, v. 21, n. 5, 2009.
0953-8984
WOS:000262375100021
10.1088/0953-8984/21/5/055801
Autor
Mogilevtsev, D
Nisovtsev, AP
Kilin, S
Cavalcanti, SB
Brandi, HS
Oliveira, LE
Institución
Resumen
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) A systematic investigation is performed on the damping of Rabi oscillations induced by an external electromagnetic field interacting with a two-level semiconductor system. We have considered a coherently driven two-level system coupled to a dephasing reservoir and shown that, to explain the dependence of the dephasing rate on the driving intensity, it is essential to consider the non-Markovian character of the reservoir. Moreover, we have demonstrated that intensity-dependent damping may be induced by various dephasing mechanisms due to stationary as well as non-stationary effects caused by coupling with the environment. Finally, present results are able to explain a variety of experimental measurements available in the literature. 21 5 EU [6FP IST-034368] INTAS Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) MCT-Institute of Millennium for Quantum Computing Institute of Millennium for Nanotechnology Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq) Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP) EU [6FP IST-034368]