Artículos de revistas
Silicon Nitride Etching In High- And Low-density Plasmas Using Sf6/o2/n2 Mixtures
Registro en:
Journal Of Vacuum Science And Technology A: Vacuum, Surfaces And Films. , v. 21, n. 2, p. 461 - 469, 2003.
7342101
10.1116/1.1547703
2-s2.0-0037349933
Autor
Reyes-Betanzo C.
Moshkalyov S.A.
Swart J.W.
Ramos A.C.S.
Institución
Resumen
Silicon nitride etching in high- and low-density plasmas was shown using SF6/O2/N2 mixtures. The kinetics of formation of NO molecules was analyzed using optical emission spectroscopy. Lower selectivities were obtained using the capacitively coupled rf plasma source. Higher NO generation was found in a high-density electron cyclotron resonance (ECR) plasma, while using a O2/N2 mixture. 21 2 461 469 Li, Y.X., French, P.J., Wolffenbuttel, R.F., (1995) J. Vac. Sci. Technol. B, 13, p. 2008 Kastenmeier, B.E.E., Matsuo, P.J., Beulens, J.J., Oehrlein, G.S., (1996) J. Vac. Sci. Technol. A, 14, p. 2802 Blain, M.J., Meisenheimer, T.L., Stevens, J.F., (1996) J. Vac. Sci. Technol. A, 14, p. 2151 Lindstrom, J.L., Oehrlein, G.S., Lanford, W.A., (1992) J. Electrochem. Soc., 139, p. 317 Kuo, Y., (1990) J. Electrochem. Soc., 137, p. 1235 Ye, J.H., Zhou, M.S., (2000) J. Electrochem. Soc., 147, p. 1168 Chatterjee, R., Karecki, S., Reiff, R., Sparks, T., Vartanian, V., Goolsby, B., (2001) J. Electrochem. Soc., 148, pp. G721 Pruette, L., Karecki, S., Chatterjee, R., Reiff, R., (2000) J. Vac. Sci. Technol. A, 18, p. 2749 Matsuo, P.J., Kastenmeier, B.E.E., Beulens, J.J., Oehrlein, O.S., (1997) J. Vac. Sci. Technol. A, 15, p. 1801 Kastenmeier, B.E.E., Matsuo, P.J., Oehrlein, O.S., (1999) J. Vac. Sci. Technol. A, 17, p. 3179 Kastenmeier, B.E.E., Matsuo, P.J., Oehrlein, O.S., Ellefson, R.E., Frees, L.C., (2001) J. Vac. Sci. Technol. A, 19, p. 25 Wang, Y., Luo, L., (1998) J. Vac. Sci. Technol. A, 16, p. 1582 Blain, M.G., (1999) J. Vac. Sci. Technol. A, 17, p. 665 (1990) CRC Handbook of Chemistry and Physics, 70th Ed., , CRC, Boca Raton, FL Moshkalyov, S.A., Diniz, J.A., Swart, J.W., Tatsch, P.J., Machida, M., (1997) J. Vac. Sci. Technol. A, 15, p. 1881 Reyes-Betanzo, C., (2002) Proceedings of the 201st Meeting of the Electroohem, p. 263. , Society, Plasma Processing XIV, Philadelphia Reece Roth, J., (1995) Industrial Plasma Engineering, 1. , Institute of Physics, Bristol Itikawa, Y., Hayashi, H., (1986) J. Phys. Chem. Ref. Data, 15, p. 985 Nahorny, J., Ferreira, C.M., Gordiets, B., Pagnon, D., Touzeau, M., Vialle, M., (1995) J. Phys. D, 28, p. 738 Guerra, V., Loureiro, J., (1995) J. Phys. D, 28, p. 1903 Moshkalyov, S.A., Steen, P.G., Gomez, S., Graham, W.G., (1999) Appl. Phys. Lett., 75, p. 328 Tsuji, M., Ishimi, H., Nakamura, M., Nishimura, Y., (1995) J. Chem. Phys., 102, p. 2479 Mateev, E., Zhelyazkov, I., (2000) J. Appl. Phys., 87, p. 3263 Reyes-Betanzo, C., Moshkalyov, S.A., Swart, J.W., unpublishedDulkin, A.E., Pyataev, V.Z., Sokolova, N.O., Moshkalyov, S.A., Smirnov, A.S., Frolov, K.S., (1993) Vacuum, 44, p. 913