Artículos de revistas
Growth And Characterization Of Cubic Inxga1- Xn Epilayers On Two Different Types Of Substrate
Registro en:
Journal Of Crystal Growth. , v. 284, n. 3-4, p. 379 - 387, 2005.
220248
10.1016/j.jcrysgro.2005.07.049
2-s2.0-26044482681
Autor
Pacheco-Salazar D.G.
Li S.F.
Cerdeira F.
Meneses E.A.
Leite J.R.
Scolfaro L.M.R.
As D.J.
Lischka K.
Institución
Resumen
We report on the growth and characterization of cubic InGaN epilayers on two different types of substrates: GaAs (0 0 1) and 3C-SiC (0 0 1). The films are grown by RF plasma-assisted molecular beam epitaxy (MBE). The crystalline quality and state of stress in these films were assessed by performing Raman scattering and X-ray diffraction experiments. Both types of measurements complement one another as techniques to determine crystalline quality and the state of biaxial strain present in the alloy layers. Our experiments show that, for the same In molar fraction, samples deposited on SiC substrates are more uniformly strained and have better crystallinity than those deposited on GaAs substrates. © 2005 Elsevier B.V. All rights reserved. 284 3-4 379 387 Naranjo, F.B., Fernandez, S., Sanchez-Garcia, Ma.A., Calle, F., Calleja, E., (2002) Appl. Phys. Lett., 80 (12), p. 2198 Chichibu, S.F., Sugiyama, M., Onuma, T., Kitamura, T., Nakanishi, H., Kuroda, T., Tackeuchi, A., Okumura, H., (2001) Appl. Phys. Lett., 79 (26), p. 4319 Calle, F., Naranjo, F.B., Fernandez, S., Sanchez-Garcia, M.A., Calleja, E., Munoz, E., (2002) Phys. Stat. Sol. (A), 192 (2), p. 277 Pierron, E.D., Paker, D.L., Mc'Nelly, J.B., (1967) J. Appl. Phys., 38, p. 4669 Powell, R.C., Lee, N.E., Kim, Y.W., Greene, J.E., (1993) J. Appl. Phys., 73, p. 189 Sherwin, M.E., Drummond, T.J., (1974) J. Appl. Phys., 45, p. 2650 Schikora, D., Henkeln, M., As, D.J., Lischka, K., Litz, T., Waag, A., Buhrow, T., Hennebergger, F., (1996) Phys. Rev. B, 54, pp. R8381 Köhler, U., (2002) A Study of Growth and Doping of Cubic Group III Nitride Structures, , Ph.D. Thesis, Universität Paderborn, Germany Cuvillier Verlag Göttingen, ISBN 3-89873-883-3 As, D.J., (2003) Optoelectronic Properties of Semiconductors and Superlattices, 19, pp. 323-450. , M.O. Manasreh, I.T. Ferguson (Eds.), III-Nitride Semiconductor Materials: Growth, in series: M.O. Manasreh (Series Ed.) Taylor & Francis Books, Inc., New York Chapter 9 Schöttker, B., (1999) Molecular Beam Epitaxy and Characterization of Doped and Undoped Cubic GaN Layers, , Ph.D. Thesis, Universität Paderborn, Germany Shaker Verlag, ISBN 3-8265-6626-2 Tabata, A., Leite, J.R., Lima, A.P., Silveira, E., Lemos, V., Frey, T., As, D.J., Lischka, K., (1999) Appl. Phys. Lett., 75, p. 1095 Silveira, E., Tabata, A., Leite, J.R., Trentin, R., Lemos, V., Frey, T., As, D.J., Lischka, K., (1999) Appl. Phys. Lett., 75, p. 3602 Lemos, V., Silveira, E., Leite, J.R., Tabata, A., Trentin, R., Scolfaro, L.M.R., Frey, T., Lischka, K., (2000) Phys. Rev. Lett., 84, p. 3666 Hünermann, M., Richter, W., Saalmüller, J., Anastassakis, E., (1986) Phys. Rev. B, 34, p. 5381 Cerdeira, F., Buchenauer, C.J., Pollak, F.H., Cardona, M., (1972) Phys. Rev. B, 5, p. 580 Cerdeira, F., Pinczuk, A., Bean, J.C., Batlogg, B., Wilson, A., (1984) Appl. Phys. Lett., 45, p. 1138 Anastassakis, E., Pinczuk, A., Burstein, E., Pollak, F., Cardona, M., (1970) Solid State Commun., 8, p. 133