Actas de congresos
Laser Reflectometry Applied To The In-situ Etching Control In An Electron Cyclotron Resonance Plasma System
Registro en:
Sbmo/ieee Mtt-s International Microwave And Optoelectronics Conference Proceedings. Ieee, Piscataway, Nj, United States, v. 2, n. , p. 616 - 619, 1999.
2-s2.0-0033295718
Autor
Mestanza S.N.M.
Diniz J.A.
Frateschi N.C.
Institución
Resumen
ECR BCl3 etching of InGaP/GaAs/InGaAs quantum well laser structures was performed to produce vertical walls with good morphology. Laser reflectometry shows a reduced etching rate for p+-InGaP material. Etching thickness control within 200 angstrom is achieved for InGaP layers. 2
616 619