Study Of Raman Spectrum Of Fe Doped Ceo2 Thin Films Grown By Pulsed Laser Deposition

dc.creatorPrakash R.
dc.creatorKumar S.
dc.creatorLee C.G.
dc.creatorSharma S.K.
dc.creatorKnobel M.
dc.creatorSong J.I.
dc.date2010
dc.date2015-06-26T12:36:43Z
dc.date2015-11-26T15:27:00Z
dc.date2015-06-26T12:36:43Z
dc.date2015-11-26T15:27:00Z
dc.date.accessioned2018-03-28T22:35:39Z
dc.date.available2018-03-28T22:35:39Z
dc.identifier9780878492466
dc.identifierAdvanced Materials Research. , v. 123-125, n. , p. 375 - 378, 2010.
dc.identifier10226680
dc.identifier10.4028/www.scientific.net/AMR.123-125.375
dc.identifierhttp://www.scopus.com/inward/record.url?eid=2-s2.0-78650758240&partnerID=40&md5=9e3ff5e46ee8717326d7444a6adf224e
dc.identifierhttp://www.repositorio.unicamp.br/handle/REPOSIP/91122
dc.identifierhttp://repositorio.unicamp.br/jspui/handle/REPOSIP/91122
dc.identifier2-s2.0-78650758240
dc.identifier.urihttp://repositorioslatinoamericanos.uchile.cl/handle/2250/1261238
dc.descriptionCe1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO 3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F 2g mode at ∼466 cm-1 and defect peak at 489 cm -1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates. © (2010) Trans Tech Publications.
dc.description123-125
dc.description
dc.description375
dc.description378
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dc.languageen
dc.publisher
dc.relationAdvanced Materials Research
dc.rightsfechado
dc.sourceScopus
dc.titleStudy Of Raman Spectrum Of Fe Doped Ceo2 Thin Films Grown By Pulsed Laser Deposition
dc.typeActas de congresos


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